The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Nov. 05, 2009
Junji Kido, Yamagata, JP;
Daigo Aoki, Tokyo, JP;
Junji Kido, Yamagata, JP;
Daigo Aoki, Tokyo, JP;
Dai Nippon Printing Co., Ltd., Tokyo-to, JP;
Other;
Abstract
A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistorof a vertical FET structure comprising: on a substrate; a source electrode; a hole transporting layerin which a slit-shaped gate electrodeis embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrodeprovided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent. Therefore, light generated in the light emitting layercan be taken out from the drain electrode side. An electron transporting layercan be provided between the light emitting layerand the drain electrode