The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Feb. 04, 2008
Hoi Sing Kwok, Hong Kong, CN;
Man Wong, Hong Kong, CN;
Zhiguo Meng, Hong Kong, CN;
Shuyun Zhao, Hong Kong, CN;
Hoi Sing Kwok, Hong Kong, CN;
Man Wong, Hong Kong, CN;
Zhiguo Meng, Hong Kong, CN;
Shuyun Zhao, Hong Kong, CN;
The Hong Kong University of Science and Technology, Hong Kong, CN;
Abstract
A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced.