The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Sep. 24, 2009
Koji Tsuji, Suita, JP;
Yosuke Hagihara, Katano, JP;
Naoki Ushiyama, Yawata, JP;
Panasonic Corporation, Kadoma-shi, JP;
Abstract
The infrared sensor () includes a base (), and an infrared detection element () formed over a surface of the base (). The infrared detection element () comprises an infrared absorption member () in the form of a thin film configured to absorb infrared, and a temperature detection member () configured to measure a temperature difference between the infrared absorption member () and the base (). The temperature detection member () includes a p-type polysilicon layer () formed over the infrared absorption member () and the base (), an n-type polysilicon layer () formed over the infrared absorption member () and the base () without contact with the p-type polysilicon layer (), and a connection layer () configured to electrically connect the p-type polysilicon layer () to the n-type polysilicon layer (). Each of the p-type polysilicon layer () and the n-type polysilicon layer () has an impurity concentration in a range of 10to 10cm. The p-type polysilicon layer () has its thickness of λ/4n, wherein λ denotes a center wavelength of the infrared to be detected by the infrared detection element (), and ndenotes a reflective index of the p-type polysilicon layer (). The n-type polysilicon layer () has its thickness of λ/4n, wherein ndenotes a reflective index of the n-type polysilicon layer ().