The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2013

Filed:

Jun. 03, 2011
Applicants:

Hongseok Choi, Seoul, KR;

Changwook Han, Seoul, KR;

Sungjoon Bae, Kyungi-do, KR;

Heesuk Pang, Kyungi-do, KR;

Minsu Kim, Kyungi-do, KR;

Hwakyung Kim, Kyungi-do, KR;

Inventors:

Hongseok Choi, Seoul, KR;

ChangWook Han, Seoul, KR;

SungJoon Bae, Kyungi-do, KR;

HeeSuk Pang, Kyungi-do, KR;

MinSu Kim, Kyungi-do, KR;

HwaKyung Kim, Kyungi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/54 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride.


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