The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Jul. 08, 2011
Yong Tae Moon, Seongnam-si, KR;
Yong Seon Song, Yongin-si, KR;
Jong Hak Won, Yongin-si, KR;
Jeong Sik Lee, Asan-si, KR;
Jung Hun Jang, Seoul, KR;
Yong Tae Moon, Seongnam-si, KR;
Yong Seon Song, Yongin-si, KR;
Jong hak Won, Yongin-si, KR;
Jeong Sik Lee, Asan-si, KR;
Jung Hun Jang, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.