The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Jul. 23, 2009
Jung Won Seo, Daejeon-si, KR;
Keong Su Lim, Daejeon-si, KR;
Jae Woo Park, Seongnam-si, KR;
Ji Hwan Yang, Daejeon-si, KR;
Sang Jung Kang, Daejeon-si, KR;
Jung Won Seo, Daejeon-si, KR;
Keong Su Lim, Daejeon-si, KR;
Jae Woo Park, Seongnam-si, KR;
Ji Hwan Yang, Daejeon-si, KR;
Sang Jung Kang, Daejeon-si, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Abstract
The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.