The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Jun. 30, 2009
Takumi Mikawa, Shiga, JP;
Yoshio Kawashima, Osaka, JP;
Atsushi Himeno, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
There are provided a resistance variable nonvolatile memory device which changes its resistance stably at low voltages and is suitable for a miniaturized configuration, and a manufacturing method thereof. The nonvolatile memory device comprises: a substrate (); a first electrode (); an interlayer insulating layer (); a memory cell hole () formed in the interlayer insulating layer; a first resistance variable layer () formed in at least a bottom portion of the memory cell hole and connected to the first electrode; a second resistance variable layer () formed inside the memory cell hole () and located on the first resistance variable layer (); and a second electrode (); the first resistance variable layer () and the second resistance variable layer () respectively comprising metal oxides of the same kind; and the first resistance variable layer () having a higher oxygen content than the second resistance variable layer ().