The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Feb. 17, 2011
Hironori Yamamoto, Kanagawa, JP;
Jun Kawahara, Kanagawa, JP;
Tomonori Sakaguchi, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Hironori Yamamoto, Kanagawa, JP;
Jun Kawahara, Kanagawa, JP;
Tomonori Sakaguchi, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.