The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Dec. 29, 2011
Qiang Xu, Shanghai, CN;
Wenguang Zhang, Shanghai, CN;
Chunsheng Zheng, Shanghai, CN;
Yuwen Chen, Shanghai, CN;
Qiang Xu, Shanghai, CN;
Wenguang Zhang, Shanghai, CN;
Chunsheng Zheng, Shanghai, CN;
Yuwen Chen, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
A method for improving capacitance uniformity in a MIM device, mainly for the purpose of improving uniformity of a thin film within the MIM device, includes eight steps in order and step S-step Smay be repeated for several times as needed. According to the method for improving capacitance uniformity in a MIM device of the present invention, a certain quantity of defects in the thin film are removed by means of several times of deposition/plasma processes based on the current PECVD, and uniformity of the deposited thin film is increased, thereby improving uniformity in wet etching rate of the thin film and further improving capacitance uniformity in the MIM device.