The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Aug. 29, 2006
Qiang Chen, Sunnyvale, CA (US);
Qiang Chen, Sunnyvale, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
According to one exemplary embodiment, an asymmetric transistor includes a channel region having a drain-side channel portion and a source-side channel portion. The asymmetric transistor can be an asymmetric MOSFET. The source-side channel portion can comprise silicon, for example. The drain-side channel portion can comprise germanium, for example. The asymmetric transistor comprises a vertical heterojunction situated between the drain-side channel portion and the source-side channel portion. According to this exemplary embodiment, the bandgap of the source-side channel portion is higher than the bandgap of the drain-side channel portion and the carrier mobility of the drain-side channel portion is higher than the carrier mobility of the source-side channel portion. The transistor can further include a gate oxide layer situated over the drain-side channel portion and the source-side channel portion, and can also include a gate situated over the gate oxide layer.