The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2013

Filed:

Jul. 12, 2011
Applicants:

Hye-young Ryu, Seoul, KR;

Hyang-shik Kong, Seongnam-si, KR;

Byung-duk Yang, Yongin-si, KR;

Kyung-sook Jeon, Incheon, KR;

Inventors:

Hye-Young Ryu, Seoul, KR;

Hyang-Shik Kong, Seongnam-si, KR;

Byung-Duk Yang, Yongin-si, KR;

Kyung-Sook Jeon, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.


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