The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8426224 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 23, 2013

Filed:

Dec. 18, 2007
Applicants:

Deli Wang, San Diego, CA (US);

Xinyu Bao, Mountain View, CA (US);

Bin Xiang, El Cerrito, CA (US);

Cesare Soci, San Diego, CA (US);

David Aplin, La Jolla, CA (US);

Inventors:

Deli Wang, San Diego, CA (US);

Xinyu Bao, Mountain View, CA (US);

Bin Xiang, El Cerrito, CA (US);

Cesare Soci, San Diego, CA (US);

David Aplin, La Jolla, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source. Heterostructures and superlattices grown along the lengths of the nanowires allow the confinement of photons in the quantum well to enhance the efficiency and as well as color tuning.


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