The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Aug. 13, 2010
Luisa Dominica Bozano, Los Gatos, CA (US);
Blake W. Davis, Hollister, CA (US);
Alshakim Nelson, Fremont, CA (US);
Jitendra Singh Rathore, Campbell, CA (US);
Linda Karin Sundberg, Los Gatos, CA (US);
Luisa Dominica Bozano, Los Gatos, CA (US);
Blake W. Davis, Hollister, CA (US);
Alshakim Nelson, Fremont, CA (US);
Jitendra Singh Rathore, Campbell, CA (US);
Linda Karin Sundberg, Los Gatos, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.