The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8425718 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 23, 2013

Filed:

Mar. 15, 2010
Applicants:

Yadong Jiang, Chengdu, CN;

Zhiming Wu, Chengdu, CN;

Tao Wang, Chengdu, CN;

Weizhi LI, Chengdu, CN;

Xiaolin Han, Chengdu, CN;

Inventors:

Yadong Jiang, Chengdu, CN;

Zhiming Wu, Chengdu, CN;

Tao Wang, Chengdu, CN;

Weizhi Li, Chengdu, CN;

Xiaolin Han, Chengdu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.


Find Patent Forward Citations

Jiang, Yadong. (2013). Wet metal-etching method and apparatus for mems device fabrication (U.S. Patent No. 8425718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8425718

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…