The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2013

Filed:

Aug. 04, 2009
Applicants:

Luke J. Currano, Columbia, MD (US);

Ronald G. Polcawich, Derwood, MD (US);

Wayne Churaman, Arnold, MD (US);

Mark Gelak, Columbia, MD (US);

Inventors:

Luke J. Currano, Columbia, MD (US);

Ronald G. Polcawich, Derwood, MD (US);

Wayne Churaman, Arnold, MD (US);

Mark Gelak, Columbia, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); C06B 45/00 (2006.01); C06B 45/12 (2006.01); C06B 33/00 (2006.01); D03D 23/00 (2006.01); D03D 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Silicon-based explosive devices and methods of manufacture are provided. In this regard, a representative method involves: providing a doped silicon substrate; depositing undoped silicon on a first side of the substrate; and infusing an oxidizer into an area bounded at least in part by the undoped silicon; wherein the undoped silicon limits an exothermic reaction of the doped silicon to the bounded area. Another representative method involves: providing a doped silicon substrate; depositing a masking layer of low-pressure chemical vapor deposited (LPCVD) Silicon nitride to the first side of the substrate; patterning the nitride mask and etching the porous silicon, and infusing oxidizer into an area bounded by the LPCVD nitride; wherein the silicon nitride limits an exothermic reaction of the doped silicon to the bounded area.


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