The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jun. 03, 2008
Jeong-woo Park, Daejeon, KR;
Gyung-ock Kim, Seoul, KR;
Mi-ran Park, Daejeon, KR;
Jong-bum You, Seongnam, KR;
Jeong-Woo Park, Daejeon, KR;
Gyung-Ock Kim, Seoul, KR;
Mi-Ran Park, Daejeon, KR;
Jong-Bum You, Seongnam, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 μm to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.