The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Feb. 13, 2012
Daisuke Nakagawa, Kyoto, JP;
Yoshinori Tanaka, Kyoto, JP;
Masahiro Murayama, Kyoto, JP;
Takao Fujimori, Kyoto, JP;
Shinichi Kohda, Kyoto, JP;
Daisuke Nakagawa, Kyoto, JP;
Yoshinori Tanaka, Kyoto, JP;
Masahiro Murayama, Kyoto, JP;
Takao Fujimori, Kyoto, JP;
Shinichi Kohda, Kyoto, JP;
Rohm Co., Ltd., Kyoto-fu, JP;
Abstract
A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.