The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Nov. 03, 2011
Louis L. C. Hsu, Fishkill, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Zhijian J. Yang, Stormville, NY (US);
Ping-chuan Wang, Hopewell Junction, NY (US);
Louis L. C. Hsu, Fishkill, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Zhijian J. Yang, Stormville, NY (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for repairing degraded field effect transistors includes forward biasing PN junctions of one of a source and a drain of a field effect transistor (FET), and a body of the FET. Charge is injected from a substrate to a gate region to neutralize charge in the gate region. The method is applicable to CMOS devices. Repair circuits are disclosed for implementing the repairs.