The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8422309 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 16, 2013

Filed:

Dec. 31, 2009
Applicants:

Byung Ryul Kim, Seoul, KR;

Duck Ju Kim, Gyeonggi-do, KR;

You Sung Kim, Seoul, KR;

SE Chun Park, Seoul, KR;

Inventors:

Byung Ryul Kim, Seoul, KR;

Duck Ju Kim, Gyeonggi-do, KR;

You Sung Kim, Seoul, KR;

Se Chun Park, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A voltage generation circuit comprises a voltage generation control unit configured to output one of a first voltage level determination signal having a fixed data value and a second voltage level determination signal having a varying data value in response to a selection signal, and a voltage generation unit configured to generate a voltage having a single pulse form or a voltage having a pulse form whose rising edge portion rises in incremental voltage steps in response to the voltage level determination signal outputted from the voltage generation control unit.


Find Patent Forward Citations

Kim, Byung. (2013). Voltage generation circuit and nonvolatile memory device using the same (U.S. Patent No. 8422309). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8422309

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