The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Nov. 04, 2010
Xin Cao, Londonderry, GB;
Haiwen Xi, San Jose, CA (US);
Wenzhong Zhu, Apple Valley, MN (US);
Robert Lamberton, Limavady, GB;
Kaizhong Gao, Eden Prairie, MN (US);
Xin Cao, Londonderry, GB;
Haiwen Xi, San Jose, CA (US);
Wenzhong Zhu, Apple Valley, MN (US);
Robert Lamberton, Limavady, GB;
Kaizhong Gao, Eden Prairie, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Method and apparatus for writing data to a magnetic memory element, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a magnetic memory element to initiate magnetic precession of the element to a desired magnetic state. A flow of a field assist current is subsequently initiated adjacent the magnetic memory element during continued application of the write current to induce a magnetic field upon the element. The field assist current persists after the write current is terminated to provide field assisted precession to the desired magnetic state.