The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Nov. 18, 2011
Applicants:

Ruopeng Liu, Guangdong, CN;

Guanxiong Xu, Guangdong, CN;

Lin Luan, Guangdong, CN;

Chunlin Ji, Guangdong, CN;

Zhiya Zhao, Guangdong, CN;

Nenghui Fang, Guangdong, CN;

Inventors:

Ruopeng Liu, Guangdong, CN;

Guanxiong Xu, Guangdong, CN;

Lin Luan, Guangdong, CN;

Chunlin Ji, Guangdong, CN;

Zhiya Zhao, Guangdong, CN;

Nenghui Fang, Guangdong, CN;

Assignees:

Kuang-Chi Institute of Advanced Technology, Nanshan District, Shenzhen, Guangdong, unknown;

Kuang-Chi Innovative Technology Ltd., Shenzhen, Guangdong, unknown;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure discloses an impedance matching component disposed between a first medium and a second medium, which is formed by stacking a plurality of homogeneous metamaterial sheet layers in a direction perpendicular to surfaces thereof. Each of the metamaterial sheet layers comprises a substrate and a plurality of man-made microstructures attached thereon. A first and last metamaterial sheet layers have impedances identical to those of the first and second media respectively. The man-made microstructures attached on the first metamaterial sheet layer have a first pattern, the man-made microstructures attached on the last metamaterial sheet layer have a second pattern, and the man-made microstructures attached on intermediate ones of the metamaterial sheet layers have patterns that are combinations of the first and second patterns, with the first pattern becoming smaller continuously and the second pattern becoming larger continuously in the stacking direction of the metamaterial sheet layers.


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