The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
May. 11, 2010
Applicants:
Wei-yip Loh, Austin, TX (US);
Kanghoon Jeon, Albany, CA (US);
Chanro Park, Austin, TX (US);
Inventors:
Assignee:
Sematech, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Apparatuses, systems, and methods for tunneling MOSFETs (TFETs) using a self-aligned heterostructure source and isolated drain. TFETs that have an abrupt junction between source and drain regions have an increased probability of carrier direct tunneling (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction.