The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Oct. 17, 2011
Tohru Saitoh, Osaka, JP;
Tomoya Kato, Chiba, JP;
Tohru Saitoh, Osaka, JP;
Tomoya Kato, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Abstract
A thin-film transistor array device includes: a driving TFT including a first crystalline semiconductor film including crystal grains having a first average grain size; and a switching TFT including a second crystalline semiconductor film including crystal grains having a second average grain size that is smaller than the first average grain size. The first crystalline semiconductor film and the second crystalline semiconductor film are formed at the same time by irradiating a noncrystalline semiconductor film using a laser beam having a Gaussian light intensity distribution such that a temperature of the noncrystalline semiconductor film is within a range of 600° C. to 1100° C., and the first crystalline semiconductor film is formed such that the temperature of the noncrystalline semiconductor film is within a temperature range of 1100° C. to 1414° C. due to latent heat generated by the laser irradiation.