The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Sep. 08, 2008
Applicants:

Michiko Takei, Osaka, JP;

Shin Matsumoto, Osaka, JP;

Kazuhide Tomiyasu, Osaka, JP;

Yasumori Fukushima, Osaka, JP;

Yutaka Takafuji, Osaka, JP;

Inventors:

Michiko Takei, Osaka, JP;

Shin Matsumoto, Osaka, JP;

Kazuhide Tomiyasu, Osaka, JP;

Yasumori Fukushima, Osaka, JP;

Yutaka Takafuji, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is intended to provide a glass substrate (), made of an insulating material, which can constitute a semiconductor apparatus () by transferring a single crystal silicon film () or a substrate including a semiconductor device onto a surface () of the insulating substrate, a transferred surface () being part of the surface (), the single crystal silicon film () capable of being provided on the transferred surface (), and the transferred surface () having an arithmetic mean roughness of not more than 0.4 nm.


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