The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jan. 31, 2011
Applicants:
Pere Roca I. Cabarrocas, Villebon sur Yvette, FR;
Jerome Damon-lacoste, Antony, FR;
Inventors:
Pere Roca I. Cabarrocas, Villebon sur Yvette, FR;
Jerome Damon-Lacoste, Antony, FR;
Assignees:
Centre National de la Recherche Scientifique (CNRS), Paris, FR;
Ecole Polytechnique, Palaiseau, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.