The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
May. 26, 2009
Bernardette Kunert, Marburg, DE;
Jorg Koch, Dautphetal, DE;
Stefan Reinhard, Rauschenberg-Bracht, DE;
Kerstin Volz, Dautphetal, DE;
Wolfgang Stolz, Marburg, DE;
Bernardette Kunert, Marburg, DE;
Jorg Koch, Dautphetal, DE;
Stefan Reinhard, Rauschenberg-Bracht, DE;
Kerstin Volz, Dautphetal, DE;
Wolfgang Stolz, Marburg, DE;
Philipps-University Marburg, , DE;
Abstract
The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaInNAsPSb, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.