The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Dec. 06, 2010
Myung-jong Kim, Hwaseong-si, KR;
In-seok Yeo, Seoul, KR;
Dae-hong Ko, Seoul, KR;
Hyun-chul Sohn, Seoul, KR;
Mann-ho Cho, Seoul, KR;
Sang-yeon Kim, Seoul, KR;
Myung-Jong Kim, Hwaseong-si, KR;
In-Seok Yeo, Seoul, KR;
Dae-Hong Ko, Seoul, KR;
Hyun-Chul Sohn, Seoul, KR;
Mann-Ho Cho, Seoul, KR;
Sang-Yeon Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyenggi-Do, KR;
Industry-Academic Cooperation Foundation, Seoul, KR;
Abstract
Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.