The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Jun. 25, 2008
Applicants:

Masamitsu Ikumo, Kawasaki, JP;

Hiroyuki Yoda, Kawasaki, JP;

Eiji Watanabe, Kawasaki, JP;

Inventors:

Masamitsu Ikumo, Kawasaki, JP;

Hiroyuki Yoda, Kawasaki, JP;

Eiji Watanabe, Kawasaki, JP;

Assignee:

Fujitsu Semiconductor Limited, Yokohama-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.


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