The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jun. 08, 2011
Masayoshi Kosaki, Kiyosu, JP;
Hiroshi Miwa, Kiyosu, JP;
Masayoshi Kosaki, Kiyosu, JP;
Hiroshi Miwa, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 μm) is formed from undoped GaN on the buffer layer by MOCVD at 1,140° C. Subsequently, a second layer (thickness: 200 nm) is formed from SiOon the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140° C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity.