The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jan. 27, 2011
Huicai Zhong, Beijing, CN;
Qingqing Liang, Beijing, CN;
Da Yang, Beijing, CN;
Chao Zhao, Kessel-lo, BE;
Huicai Zhong, Beijing, CN;
Qingqing Liang, Beijing, CN;
Da Yang, Beijing, CN;
Chao Zhao, Kessel-lo, BE;
Abstract
The invention provides a MOS transistor and a method for forming the MOS transistor. The MOS transistor includes a semiconductor substrate; a gate stack on the semiconductor substrate, and including a gate dielectric layer and a gate electrode on the semiconductor substrate in sequence; a source region and a drain region, respectively at sidewalls of the gate stack sidewalls of the gate stack and in the semiconductor; sacrificial metal spacers on sidewalls of the gate stack sidewalls of the gate stack, and having tensile stress or compressive stress. This invention scales down the equivalent oxide thickness, improves uniformity of device performance, raises carrier mobility and promotes device performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile