The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Apr. 27, 2011
Applicants:
Kuo Hui Su, Taipei, TW;
Yi Nan Chen, Taipei, TW;
Hsien Wen Liu, Luzhu Township, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Kueishan, Tao-Yuan Hsien, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a gate dielectric layer comprises the steps of: forming a dielectric layer on a semiconductor substrate; performing a nitrogen treating process to form a nitride layer on the dielectric layer; and performing a thermal treating process at 1150-1400° C. for a period of 400-800 milliseconds, to form a gate dielectric layer. A step of forming a gate layer on the gate dielectric layer may be performed to form a gate structure.