The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jan. 11, 2012
Martin M. Frank, Dobbs Ferry, NY (US);
Dechao Guo, Fishkill, NY (US);
Shu-jen Hen, Cortlandt, NY (US);
Kuen-ting Shiu, White Plains, NY (US);
Martin M. Frank, Dobbs Ferry, NY (US);
Dechao Guo, Fishkill, NY (US);
Shu-Jen Hen, Cortlandt, NY (US);
Kuen-Ting Shiu, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor fabrication method includes defining a gate structure on a substrate, depositing a dielectric layer on the gate structure, depositing a first metal layer on the dielectric layer, removing a portion of the first metal layer, depositing a second metal layer, annealing the first and second metal layers, and defining a carbon based device on the dielectric layer and the gate structure.