The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Sep. 08, 2011
Jong-won Choi, Seongnam-si, KR;
Jun-seok Yang, Seoul, KR;
Keon-yong Cheon, Seoul, KR;
Sung-hyun Yoon, Yongin-si, KR;
Jong-Won Choi, Seongnam-si, KR;
Jun-Seok Yang, Seoul, KR;
Keon-Yong Cheon, Seoul, KR;
Sung-Hyun Yoon, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
Provided is a method of forming a semiconductor device. The method includes forming an insulating film on a semiconductor substrate, a conductive film on the insulating film, and a first structure and a second structure on the conductive film. The semiconductor substrate has first and second regions. The first and second structures are formed on the first and second regions, respectively. An impurity diffused region is formed in the semiconductor substrate using the first structure as a mask. The impurity diffused region overlaps the first structure. A portion of the first structure, and the conductive film are etched to respectively form a gate structure and a capacitor structure on the first and second regions.