The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jul. 21, 2011
Min Suk Lee, Gyeonggi-do, KR;
Byung Gu Gyun, Daejeon, KR;
BO Kyoung Jung, Gyeonggi-do, KR;
Chang Hyup Shin, Gyeonggi-do, KR;
Min Suk Lee, Gyeonggi-do, KR;
Byung Gu Gyun, Daejeon, KR;
Bo Kyoung Jung, Gyeonggi-do, KR;
Chang Hyup Shin, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for manufacturing a semiconductor memory device includes sequentially depositing a bottom electrode layer, a magnetic tunnel junction (MTJ) layer, a first top electrode layer, a second top electrode layer and a mask layer, etching the mask layer and forming a mask pattern, etching the second top electrode layer and the first top electrode layer by using the mask pattern as an etch barrier, etching the MTJ layer by using the mask layer and the second top electrode layer as an etch barrier, and etching the bottom electrode layer by using the first top electrode layer as an etch barrier.