The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Aug. 01, 2006
Hideo Hosono, Kanagawa, JP;
Masahiro Hirano, Tokyo, JP;
Hidenori Hiramatsu, Kanagawa, JP;
Toshio Kamiya, Kanagawa, JP;
Hiroshi Yanagi, Tokyo, JP;
Eiji Motomitsu, Kanagawa, JP;
Hideo Hosono, Kanagawa, JP;
Masahiro Hirano, Tokyo, JP;
Hidenori Hiramatsu, Kanagawa, JP;
Toshio Kamiya, Kanagawa, JP;
Hiroshi Yanagi, Tokyo, JP;
Eiji Motomitsu, Kanagawa, JP;
Japan Science and Technology Agency, Kawagucki-shi, JP;
Abstract
A magnetic semiconductor material contains at least one type of transition metals (Mn, Fe, Ru, Re, and Os) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.