The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Jan. 12, 2012
Yiran Chen, Eden Prairie, MN (US);
Hai LI, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Ran Wang, Eden Prairie, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Hai Li, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Ran Wang, Eden Prairie, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.