The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Dec. 29, 2009
Florin Udrea, Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Tanya Trajkovic, Cambridge, GB;
Nishad Udugampola, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Tanya Trajkovic, Cambridge, GB;
Nishad Udugampola, Cambridge, GB;
Cambridge Semiconductor Limited, Cambridge, GB;
Abstract
This invention generally relates to LIGBTs, ICs comprising an LIGBT and methods of forming an LIGBT, and more particularly to an LIGBT comprising a substrate region of first conductivity type and peak dopant concentration less than about 1×10/cm; a lateral drift region of a second, opposite conductivity type adjacent the substrate region and electrically coupled to said substrate region; a charge injection region of the first conductivity type to inject charge toward said lateral drift region; a gate to control flow of said charge in said lateral drift region; metal enriched adhesive below said substrate region; and an intermediate layer below said substrate region to substantially suppress charge injection into said substrate region from said metal enriched adhesive.