The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Jul. 13, 2010
Shinji Tokuyama, Osaka, JP;
Masaki Ueno, Itami, JP;
Masahiro Adachi, Osaka, JP;
Takashi Kyono, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Koji Katayama, Osaka, JP;
Yoshihiro Saito, Yokohama, JP;
Shinji Tokuyama, Osaka, JP;
Masaki Ueno, Itami, JP;
Masahiro Adachi, Osaka, JP;
Takashi Kyono, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Koji Katayama, Osaka, JP;
Yoshihiro Saito, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.