The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Apr. 27, 2012
Makoto Miyoshi, Inazawa, JP;
Shigeaki Sumiya, Handa, JP;
Mikiya Ichimura, Ichinomiya, JP;
Mitsuhiro Tanaka, Tsukuba, JP;
Makoto Miyoshi, Inazawa, JP;
Shigeaki Sumiya, Handa, JP;
Mikiya Ichimura, Ichinomiya, JP;
Mitsuhiro Tanaka, Tsukuba, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.