The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
May. 20, 2010
Masaki Yamanaka, Osaka, JP;
Hiroshi Nakatsuji, Osaka, JP;
Naoki Makita, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer () of the thin film transistor and a semiconductor layer () of the thin film diode are both crystalline semiconductor layers. The semiconductor layer () of the thin film transistor and the semiconductor layer () of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer () of the thin film diode is greater than the thickness of the semiconductor layer () of the thin film transistor. The difference between the thickness of the semiconductor layer () of the thin film transistor and the thickness of the semiconductor layer () of the thin film diode is greater than 25 nm. The surface roughness of the semiconductor layer () of the thin film diode is larger than the surface roughness of the semiconductor layer () of the thin film transistor. As a result, the thin film transistor and the thin film diode achieve respective required characteristics.