The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Jan. 20, 2010
Praneet Adusumilli, Evanston, IL (US);
Alessandro Callegari, Yorktown Heights, NY (US);
Josephine B. Chang, Mahopac, NY (US);
Changhwan Choi, Edgewater, NJ (US);
Martin Michael Frank, Dobbs Ferry, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Vijay Narayanan, New York, NY (US);
Praneet Adusumilli, Evanston, IL (US);
Alessandro Callegari, Yorktown Heights, NY (US);
Josephine B. Chang, Mahopac, NY (US);
Changhwan Choi, Edgewater, NJ (US);
Martin Michael Frank, Dobbs Ferry, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Vijay Narayanan, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor device and method which includes a semiconductor substrate, a dielectric gate layer, preferably a high dielectric constant gate layer, overlaying the semiconductor substrate and an electrically conductive oxygen barrier layer overlaying the gate dielectric layer. In one embodiment, there is a conductive layer between the gate dielectric layer and the oxygen barrier layer. In another embodiment, there is a low resistivity metal layer on the oxygen barrier layer.