The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Sep. 02, 2010
Tai-soo Lim, Seoul, KR;
Hyunseok Lim, Suwon-si, KR;
Shin-jae Kang, Yongin-si, KR;
Kyung-tae Jang, Seoul, KR;
Tai-Soo Lim, Seoul, KR;
HyunSeok Lim, Suwon-si, KR;
Shin-Jae Kang, Yongin-si, KR;
Kyung-Tae Jang, Seoul, KR;
Abstract
Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed.