The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Oct. 12, 2011
Tatsuya Arao, Kanagawa-ken, JP;
Daiki Yamada, Tochigi, JP;
Hidekazu Takahashi, Tochigi, JP;
Naoto Kusumoto, Kanagawa, JP;
Kazuo Nishi, Tochigi, JP;
Yuusuke Sugawara, Tochigi, JP;
Hironobu Takahashi, Tochigi, JP;
Tatsuya Arao, Kanagawa-ken, JP;
Daiki Yamada, Tochigi, JP;
Hidekazu Takahashi, Tochigi, JP;
Naoto Kusumoto, Kanagawa, JP;
Kazuo Nishi, Tochigi, JP;
Yuusuke Sugawara, Tochigi, JP;
Hironobu Takahashi, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.