The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Mar. 08, 2012
Kazuhiro Suzuki, Tokyo, JP;
Hiroto Honda, Yokohama, JP;
Ikuo Fujiwara, Yokohama, JP;
Hideyuki Funaki, Tokyo, JP;
Hitoshi Yagi, Yokohama, JP;
Keita Sasaki, Yokohama, JP;
Honam Kwon, Kawasaki, JP;
Koichi Ishii, Kawasaki, JP;
Masako Ogata, Yokohama, JP;
Risako Ueno, Tokyo, JP;
Kazuhiro Suzuki, Tokyo, JP;
Hiroto Honda, Yokohama, JP;
Ikuo Fujiwara, Yokohama, JP;
Hideyuki Funaki, Tokyo, JP;
Hitoshi Yagi, Yokohama, JP;
Keita Sasaki, Yokohama, JP;
Honam Kwon, Kawasaki, JP;
Koichi Ishii, Kawasaki, JP;
Masako Ogata, Yokohama, JP;
Risako Ueno, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.