The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Dec. 08, 2006
Applicants:
Rae-man Park, Daejeon, KR;
Sang-hyeob Kim, Daejeon, KR;
Sunglyul Maeng, Chungcheongbuk-do, KR;
Jonghyurk Park, Daegu, KR;
Inventors:
Rae-Man Park, Daejeon, KR;
Sang-Hyeob Kim, Daejeon, KR;
Sunglyul Maeng, Chungcheongbuk-do, KR;
Jonghyurk Park, Daegu, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.