The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2013

Filed:

Jul. 27, 2006
Applicants:

Geoffrey F. Strouse, Tallahassee, FL (US);

Jeffrey A. Gerbec, Goleta, CA (US);

Inventors:

Geoffrey F. Strouse, Tallahassee, FL (US);

Jeffrey A. Gerbec, Goleta, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A62D 3/178 (2007.01); B01J 19/12 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
Abstract

A method is provided for producing crystalline nanoparticle semiconductor material. The method includes the steps of mixing a precursor in a solvent to form a reaction mixture and subjecting the reaction mixture to microwave dielectric heating at sufficient power to achieve a superheating temperature of the reaction mixture. A growth-phase reaction is permitted to proceed, wherein nanoparticles are formed in the heated reaction mixture. The reaction is then quenched to substantially terminate nanoparticle formation.


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