The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Dec. 19, 2008
Yukio Shakuda, Kyoto, JP;
Yukio Shakuda, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate, an n-type GaN layer, an n-type AlGaN layer, an active layer, a p-type AlGan layerand a p-type GaN layerare laminated sequentially. On the p-type GaN layer, an insulating filmand a transparent electrodeare formed. A portion of the transparent electrodeis formed in contact with the p-type GaN layer. A ridge stripe portion D to form a waveguide is configured of a transparent film. A region, where the transparent electrodeand the p-type GaN layerare in contact with each other, serves as a stripe-shaped current injection region.