The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2013

Filed:

Apr. 29, 2010
Applicants:

Kyota Nozu, Atsugi, JP;

Ryoji Kondo, Sagamihara, JP;

Inventors:

Kyota Nozu, Atsugi, JP;

Ryoji Kondo, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 27/32 (2006.01); G03B 27/54 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a pattern with dots or holes arranged in a two-dimensional period by illuminating, with illumination light, a mask having a light-shielding portion pattern on a translucent substrate, and performing projection and exposure of an object to be exposed through a projection optical system. The illumination light is an effective light source of multipole illumination. A first exposure process is performed with the mask placed at a first position relative to the object to be exposed, and a second exposure process is performed with the mask placed at a second position. The mask has line patterns having lines with a line width[m] arranged in parallel at a pitch of P. The line patterns are arranged in a mesh such that the line patterns intersect one another at 60° in three directions, and the illumination light is an effective light source of hexapole illumination. The second exposure process is performed, after the first exposure process, with the mask placed at a second position displaced from the first position by 2P/3 [m] in a direction perpendicular to any line of the line patterns. A third exposure process is performed, after the second exposure process, with the mask placed at a third position further displaced from the second position by 2P/3 [m] in the direction, to thereby form a dot pattern in a two-dimensional period having a pitch of P/3 [m].


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