The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2013

Filed:

Jun. 21, 2006
Applicants:

Soon Sung Yoo, Gunpo-si, KR;

OH Nam Kwon, Yongin-si, KR;

Youn Gyoung Chang, Anyang-si, KR;

Heung Lyul Cho, Suwon-si, KR;

Seung Hee Nam, Suwon-si, KR;

Inventors:

Soon Sung Yoo, Gunpo-si, KR;

Oh Nam Kwon, Yongin-si, KR;

Youn Gyoung Chang, Anyang-si, KR;

Heung Lyul Cho, Suwon-si, KR;

Seung Hee Nam, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/136 (2006.01); G02F 1/1333 (2006.01); G02F 1/13 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. In the method of fabricating the liquid crystal display device, a first conductive pattern group including a gate line and a gate electrode, a common line and a common electrode, a pixel electrode and a pad in a multiple conductive layer having a stepwise shape including a transparent conductive layer is formed on a substrate by a first mask process. An insulating film and a semiconductor layer including a plurality of contact holes are formed on the first mask pattern group by a second mask process. A second pattern group including a data line, a source electrode and a drain electrode is formed on the semiconductor layer and the semiconductor layer is patterned, and an active layer is exposed between the source electrode and the drain electrode by a third mask process.


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