The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Mar. 16, 2010
Kyoungmin Lee, Seoul, KR;
Duckki Kwon, Incheon, KR;
Juho Kim, Seoul, KR;
Eunchul Kang, Seoul, KR;
Byongsung Lee, Gyeonggi-do, KR;
Kyoungmin Lee, Seoul, KR;
Duckki Kwon, Incheon, KR;
Juho Kim, Seoul, KR;
Eunchul Kang, Seoul, KR;
Byongsung Lee, Gyeonggi-do, KR;
Fairchild Korea Semiconductor Ltd., Bucheon, KR;
Abstract
A low-voltage and over-voltage detection circuit receives a power source voltage, generates a shift voltage by shifting the received voltage to a predetermined level, and fixes the shift voltage as a clamping voltage when the shift voltage is higher than a predetermined clamping voltage. The low-voltage and over-voltage detection circuit includes a first transistor and a second transistor. The first transistor generates a regulator voltage that varies according to the power source voltage and performs a switching operation according to the shift voltage and the regulator voltage, and the second transistor is connected in parallel with the first transistor and generates hysteresis. The low-voltage and over-voltage detection circuit determines whether the power source voltage is a low-voltage or an over-voltage by using a drain voltage generated according to currents flowing to the first and second transistors.